TAO JUN KUN DO LICENSE
2017 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (), which permits unrestricted use, distribution, anc reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. In this work, we reported an AgNWs/AZO hybrid film on a photopolymer NOA63 substrate, where AZO was deposited 6 nm by ALD. In our previous work, we have prepared AgNWs/ZnO electrode in which ZnO as a conductive-bridging for AgNWs was deposited by low temperature (60 ☌) ALD, but the sheet resistance was higher than AgNWs. had reported that AgNWs electrode embedded in NOA63 has an ultra-smooth surface with a root-mean-square (RMS) of 0.4 nm and Rpv of 4.557 nm. The buried-layer structure, which comprises a AgNWs film and a metal -oxide layer, has been suggested as an alternative to overcome these issues. Nonetheless, pure AgNWs films have several drawbacks, such as a high surface roughness, a large junction resistance, and a small contact area. fabricated P3HT:PCBM OSCs using AgNWs as the lower electrode, leading to high PCEs of up to 3.5%. Primary material, are most promising because of their outstanding electrical, optical and mechanical properties, Furthermore, AgNWs films can be deposited using a low-cost solution process, Dong-Seok Leem et al. * Correspondence: of Science, Changchun University of Science and Technology,įulllist of author information is available at the end of the article Among these alternatives, AgNWs, which uses one-dimensional nano-sized silver as the Recently, a variety of materials have been investigated as substitutes for ITO, including conjugated polymers, carbon nano-tubes (CNTs), graphene, silver nanowires (AgNWs), and metal oxides such as zinc oxide (ZnO). In addition, its fragility is a mismatch with the demands by flexible electronics, the next generation light source, and display technology.
It is increasingly expensive and hard to produce in a sustainable manner because of a limited supply of indium. However, ITO has important disadvantages. Transparent conducting electrodes (TCEs) have been widely used in photo-electronic devices such as thin film transistors, thin film solar cells, and organic light-emitting devices (OLEDs), due to their excellent optical and electrical properties, in particular, indium tin oxide (ITO). Keywords: Silver nanowires, Al-doped ZnO, Atomic layer deposition, Transparent conductive electrode, Organic light-emitting device Flexible OLED were built with AgNWs/AZO electrodes, which suggests that this approach can replace conventional ITO TCEs in organic electronic devices in the future. In addition, the electrodes also have a very smooth surface (0.31 nm root-mean-square roughness), which is flat enough to contact the OLED stack. These values are even comparable to conventional ITO on glass. The AgNWs/AZO composite electrode on photopolymer substrate shows a low sheet resistance of only 8.6 Q/sq and a high optical transmittance of about 83% at 550 nm. In this study, we report on a nano-composite TCE, which is made of a silver nanowire (AgNW) network, combined with aluminum-doped zinc oxide (ZnO:Al, AZO) by atomic layer deposition. However, ITO films, typically deposited on glass are brittle and they make it difficult to produce flexible devices, restricting their use for flexible devices. Up to now, indium tin oxide (ITO) films have been widely used as transparent conductive electrodes (TCE) in organic opto-electronic devices. The high interest in organic light-emitting device (OLED) technology is largely due to their flexibility. Hu Wang1,2, Kun Li1,2, Ye Tao2, Jun Li2, Ye Li1, Lan-Lan Gao1*, Guang-Yong Jin1 and Yu Duan1 Smooth ZnO:Al-AgNWs Composite Electrode for Flexible Organic Light-Emitting Device
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